| Summary: | 碩士 === 國立中央大學 === 物理研究所 === 93 === The structure, the optical properties, surface roughness and electrical characteristics of ZnO bulk doped with N and P ions by implantation were studied. We use the Atomic Force Microscope to determine the surface roughness. Surface roughness of ZnO bulk samples increased after 800℃ annealing. However, we observed that ZnO surface roughness annealing in oxygen ambient were smoother than in nitrogen ambient. It is very clear that the expansion strain of ZnO samples after implantation were determined by in-plane x-ray diffraction. This is because implantation usually damages the structure of sample. For the photoluminescence measurement, the peak position of undoped ZnO bulk annealing at 8000C for 30s in oxygen ambient by RTA is around 515nm. We suggest that the anti-site defect (OZn) or interstitial zinc defect dominated in the green emission of undoped ZnO bulk. N+-implanted ZnO bulk annealing at 8000C for 30s in oxygen ambient by RTA generates a 610nm orange spectrum at 10K. The orange luminescence was also observed in these samples doped with P and Ar ion by implantation. The 610nm peak of ZnO sample maybe comes from the structure damage. In term of electrical measurement, we obtained both the n-type ZnO semiconductor with and without implantation.
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