| Summary: | 碩士 === 國立交通大學 === 奈米科技研究所 === 93 === In this thesis, we report technique for growth of singled-wall carbon nanotubes (SWCNTs) by atmosphere thermal chemical vapor deposition (AT-CVD) and used hydrogen pretreatment method to optimize parameters for high quality SWCNTs in our experiment. We used lithography technique to define our pattern on silicon dioxide wafer, then we deposited electrode and catalyst by electron beam evaporation system. The patterned electrodes were obtained using a lift-off process by dissolving the resist in acetone. SWCNT growth was made in quartz tube furnaces at 800°C and employing ethylene as the carbon feedstock. It was found that the Al buffer layer in our experimental condition can not increase the number of SWCNT. However, when Mo buffer layer was used instead of Al buffer layer, SWCNTs were grown on the Molybdenum buffer layer. We changed different pretreatment time and hydrogen gas flow to clarify the relationship between size of nano catalyst particles and hydrogen concentration. We used scanning electron microscopy (SEM), Raman spectrum, and atomic force microscopy (AFM) to confirm that pretreatment can adjust the nano catalyst particles size as a result improve the SWCNT quality. Finally, the linear I-V curve was demonstrated for the was metallic properties of SWCNT in our experimental condition.
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