Hazardous Arsenic in Semiconductor Working Area

碩士 === 國立交通大學 === 工學院碩士在職專班產業安全與防災學程 === 93 === ABSTRACT Ion Implant Tool is one of the wafer manufacturing processes in Semiconductor Industry. In addition to the routine preventive maintenance, equipment decontamination operation is also needed. The equipment decontamination operation is conducted...

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Main Authors: Cheng - Hsun Tai, 戴振勳
Other Authors: Chuen - Jinn Tsai
Format: Others
Language:zh-TW
Published: 2005
Online Access:http://ndltd.ncl.edu.tw/handle/19541815108350192814
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spelling ndltd-TW-093NCTU57070182016-06-06T04:10:44Z http://ndltd.ncl.edu.tw/handle/19541815108350192814 Hazardous Arsenic in Semiconductor Working Area 半導體作業環境中有害物砷之探討 Cheng - Hsun Tai 戴振勳 碩士 國立交通大學 工學院碩士在職專班產業安全與防災學程 93 ABSTRACT Ion Implant Tool is one of the wafer manufacturing processes in Semiconductor Industry. In addition to the routine preventive maintenance, equipment decontamination operation is also needed. The equipment decontamination operation is conducted during the factory phase-out, tool transfer (within company, transfer to foreign country, after tool demonstration), upgrade of the tools and relocation of the old tools. The purpose of this study is to know the total amount of Arsenic compound which exists on the surface of the tool parts, after equipment decontamination is completed and before relocation of the tools. This study use the wipe test method to find-out the mass of the residual Arsenic, and its compounds (total As), with the aid of the consultant company. In Taiwan, the Permissible Exposure Level) of Arsenic, inorganic compounds (as total As ) is 0.5mg/m3, and 0.05ppm (0.16mg/m3) for AsH3 , respectively. However, there is no standard for the amount of As on the surface. This study has analyzed 29 samples taken from wipe test using 37 mm MCE filters wetted by D.I. water. If the surface is flat, the wiping area is 10 cm X 10 cm. For irregular surface, the wiping area is controlled within about 100 cm2. The experimental data show that the As mass per 100 cm2 is 0.1 ~ 96.73μg, lower than the reference limiting value of 100μg in the industry. In addition, this study also conducted the wipe test on the tools, desk surface, and the surface of packaging boxes of the major company that handled the decontamination operation. The test results show that As mass per 100 cm2 is from 0.011~ 39.03μg. This study wipe test experimental data show that the As mass per 100 cm2 is 0.1 ~ 96.73μg , lower than the reference limiting value in the industry , after the Ion Implant Tool equipment decontamination and transfer to new Semiconductor Industry for installation、testing. In addition, this study also conducted the wipe test on the major company that handled the decontamination operation, the test experimental data show that the As mass per 100 cm2 is 0.011~ 39.03μg, lower than the reference limiting value in the industry. Keywords: Arsenic, Ion Implant, Preventive Maintenance, Equipment Decontamination, Wipe test. Chuen - Jinn Tsai Tung - Sheng Shih 蔡春進 石東生 2005 學位論文 ; thesis 58 zh-TW
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description 碩士 === 國立交通大學 === 工學院碩士在職專班產業安全與防災學程 === 93 === ABSTRACT Ion Implant Tool is one of the wafer manufacturing processes in Semiconductor Industry. In addition to the routine preventive maintenance, equipment decontamination operation is also needed. The equipment decontamination operation is conducted during the factory phase-out, tool transfer (within company, transfer to foreign country, after tool demonstration), upgrade of the tools and relocation of the old tools. The purpose of this study is to know the total amount of Arsenic compound which exists on the surface of the tool parts, after equipment decontamination is completed and before relocation of the tools. This study use the wipe test method to find-out the mass of the residual Arsenic, and its compounds (total As), with the aid of the consultant company. In Taiwan, the Permissible Exposure Level) of Arsenic, inorganic compounds (as total As ) is 0.5mg/m3, and 0.05ppm (0.16mg/m3) for AsH3 , respectively. However, there is no standard for the amount of As on the surface. This study has analyzed 29 samples taken from wipe test using 37 mm MCE filters wetted by D.I. water. If the surface is flat, the wiping area is 10 cm X 10 cm. For irregular surface, the wiping area is controlled within about 100 cm2. The experimental data show that the As mass per 100 cm2 is 0.1 ~ 96.73μg, lower than the reference limiting value of 100μg in the industry. In addition, this study also conducted the wipe test on the tools, desk surface, and the surface of packaging boxes of the major company that handled the decontamination operation. The test results show that As mass per 100 cm2 is from 0.011~ 39.03μg. This study wipe test experimental data show that the As mass per 100 cm2 is 0.1 ~ 96.73μg , lower than the reference limiting value in the industry , after the Ion Implant Tool equipment decontamination and transfer to new Semiconductor Industry for installation、testing. In addition, this study also conducted the wipe test on the major company that handled the decontamination operation, the test experimental data show that the As mass per 100 cm2 is 0.011~ 39.03μg, lower than the reference limiting value in the industry. Keywords: Arsenic, Ion Implant, Preventive Maintenance, Equipment Decontamination, Wipe test.
author2 Chuen - Jinn Tsai
author_facet Chuen - Jinn Tsai
Cheng - Hsun Tai
戴振勳
author Cheng - Hsun Tai
戴振勳
spellingShingle Cheng - Hsun Tai
戴振勳
Hazardous Arsenic in Semiconductor Working Area
author_sort Cheng - Hsun Tai
title Hazardous Arsenic in Semiconductor Working Area
title_short Hazardous Arsenic in Semiconductor Working Area
title_full Hazardous Arsenic in Semiconductor Working Area
title_fullStr Hazardous Arsenic in Semiconductor Working Area
title_full_unstemmed Hazardous Arsenic in Semiconductor Working Area
title_sort hazardous arsenic in semiconductor working area
publishDate 2005
url http://ndltd.ncl.edu.tw/handle/19541815108350192814
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