STI Mechanical Stress Effect on Layout Dependence of MOS Electrical Characteristics for Logic 90nm Technology Node
碩士 === 國立交通大學 === 電機資訊學院碩士在職專班 === 93 === At sub-90nm device nodes, implementation of shallow trench isolation (STI) becomes more challenging. One of the major challenges with scaling STI have to deal with is the STI-induced mechanical stress effect which impact MOSFET electrical behavior. In this...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59843626185170590154 |