UWB CMOS Low-Noise Amplifier and Wideband InGaAs pHEMT Switch

• Main Authors: Pei-Ju Chiu, 邱珮如
• Other Authors: Shyh-Jong Chung
• Format: Others
• Language: en_US
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/70655105630511470569

碩士 === 國立交通大學 === 電信工程系所 === 93 === The first part of the thesis describes the design and analysis of a low-noise amplifier for UWB system. The features of the UWB LNAs are wide bandwidth, low power consumption and flatness of gain. In order to get wide bandwidth, we utilize the concept of multi-stages to design this circuit. The first stage is a common gate topology and two common source amplifiers in the middle stages and the final stage is a voltage follower. The bandwidth of the LNA is ranged from 2.6 GHz to 8.6 GHz. The gain is 16 dB 1 dB. The minimum noise figure is 5.5 dBm and the power consumption is 24 mW. The second part is the design and measurement of a wideband single-pole double-throw switch. The bandwidth of the SPDT switch is ranged from 33 to 60 GHz centered at 46.5 GHz. The insertion loss is less than 4 dB and the isolation is more than 32 dB.