Characterizations of Doping Effects in Nitride Films
博士 === 國立交通大學 === 電子物理系所 === 93 === We have carried out systematic studies on epitaxial growth of d In isoelectronic doping p-GaN using metalorganic vapor phase epitaxy technique (MOVPE). For the isoelectronic In-doping effects on Mg-doped GaN films, The preliminary results indicate that when In ato...
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67030038710784166379 |