Studies of V-defects on GaN Films by Micro Raman Spectroscopy
碩士 === 國立交通大學 === 電子物理系所 === 93 === The optical properties of V-defects on GaN films were characterized by using atomic force microscopy and micro-Raman spectroscopy. Raman LO related modes of 3.3�慆 V-defects show noticeable blue shifts from different doping concentration samples. For V-defects of d...
Main Authors: | Chern-Hsun Shen, 沈承勳 |
---|---|
Other Authors: | Ming-Chih Lee |
Format: | Others |
Language: | en_US |
Published: |
2005
|
Online Access: | http://ndltd.ncl.edu.tw/handle/64490779060912276336 |
Similar Items
-
Multiphysics characterization of GaN HEMTs via micro-Raman spectroscopy
by: Bagnall, Kevin Robert
Published: (2017) -
Mg-doped GaN Films Studied by Photoluminescence and Raman Spectroscopy
by: Hsiao-Hui Chen, et al.
Published: (1999) -
Analysis of strain in GaN and SiC films by Raman-scattering spectroscopy
by: Pei-Chun Chung, et al.
Published: (2012) -
Raman spectroscopy study of GaN embedded in heterostructures
by: Yen-Fen Chen, et al.
Published: (2011) -
Isoelectronic In-doped GaN Studied by Photoluminescence and Raman Spectroscopy
by: Chen, Chung-Cheng, et al.
Published: (1998)