Fabrication and Analysis of Shallow Surface-Etched and Zinc-Diffused Ion-Implanted Vertical-Cavity Surface Emitting Lasers

• Main Authors: Jhih-Ming Lin, 林志明
• Other Authors: Su-Lin Yang
• Format: Others
• Language: en_US
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/41595928575994538206

碩士 === 國立交通大學 === 電子物理系所 === 93 === In this study, we fabricated and analyzed the 850 nm ion-implanted vertical-cavity surface emitting lasers (VCSELs) with shallow-etching and zinc-diffusion onto the surface distributed Bragg reflector (DBR). The Laguerre-Gaussian modes and linear polarization modes were applied for determining mode intensity distribution. The temperature effect on the mode spot size was evaluated. We calculated the reflectance of shallow-etched and zinc-diffused 850 nm DBR. We found that there is a local reflectance minimum of 0.985 with surface etching depth of 86 nm. This calculation is coincident to our experimental result. For the case of zinc diffusion, we found that the reflectance and stop band decrease with the diffusion time. The resultant DBR reflectance is about 0.95 with for the diffusion time of 8 ~ 16 minutes at 600 ℃. Due to an amorphous film formed over the DBR surface, the measured reflectance is much lower than the simulated result and is not comparable to the simulation result. We applied separately the shallow-etching and zinc-diffusion techniques to fabricate single mode 850 nm ion-implanted VCSELs. Due to a large series resistance of VCSELs resulted from the small ion-implanted aperture size, most devices cannot reach the threshold lasing condition. The measured relationship of light power to current indicates the characteristics of light emitting diodes. By adequately controlling the aperture sizes of ion-implantation and surface relief or zinc diffusion, the feasible single-mode VCSELs are suggested to be fabricated successfully.