Investigation of Hot Carrier Reliabilities in Strained-Silicon Nanoscale CMOS Devices
碩士 === 國立交通大學 === 電子工程系所 === 93 === In more recent years, strained-Si device has been evolved as a potential candidate for high speed and low power logic CMOS technologies as a result of the mobility enhancement in devices. To explore the advantages or the shortcomings of the strained-Si devices, fu...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/34188327279122079543 |