A High Speed Fifth Order Gm-C Filter For Ultra-wideband Wireless Applications
碩士 === 國立交通大學 === 電子工程系所 === 93 === A 5th order CMOS high frequency elliptic low pass filter is designed to achieve narrowest transition band. The filter is composed of Gm blocks and capacitances. The symmetrical & unsymmetrical differential pair increases Gm linearity, and negative impedance in...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/91915474391591117746 |
| Summary: | 碩士 === 國立交通大學 === 電子工程系所 === 93 === A 5th order CMOS high frequency elliptic low pass filter is designed to achieve narrowest transition band. The filter is composed of Gm blocks and capacitances. The symmetrical & unsymmetrical differential pair increases Gm linearity, and negative impedance increases Gm differential output resistance. The total harmonic distortion (THD) of this filter is -40dB within 0.52Vp-p. Input-referred noise is 211.8uVrms. Dynamic range is 58.4dB for 20MHz input. The power consumption of filters is 32.25mW (include 12.1mW output buffer) from 1.8V supply. The figure-of-merit for the filter is 59.75dB. The filter is implemented in UMC 0.18-μm CMOS technology and has been packaged in SPIL QFN20 which is mounted on PCB board in favor of measurement. The f3db is 226MHz and gain is -4.07 dB with 1.32 dB passband ripple. The power dissipation of this filter is 43.2mW.
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