The Simulation of Strain –Induced Very Low Noise RF MOSFETs on Flexible Plastic Substrate
碩士 === 國立交通大學 === 電子工程系所 === 93 === Due to high flexibility of silicon thinner substrate thickness on plastic, larger tensile strain can be applied for further improvement. A low minimum noise figure (NFmin) of 0.96dB and high associated gain of 14.1dB at 10GHz, were measured for 0.18�慆 MOSFETs on p...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69413638038669500493 |