The Fabrication and Stability Study of the Novel Structure of LTPS TFTs

• Main Authors: Shih-Hsueh Weng, 翁世學
• Other Authors: Kow-Ming Chang
• Format: Others
• Language: en_US
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/80519573963936569669

碩士 === 國立交通大學 === 電子工程系所 === 93 === In this paper, a novel structure of the polycrystalline silicon thin-film transistors (Poly-Si TFT’s) with a thicker source/drain and a thin channel have been developed and investigated. In the proposed structure, the thick source/drain and a thin active region could be achieved with only four mask steps, which are less than conventional stagger TFT. The proposed TFT has and higher Swing (~1.51). The on/off ratio is 1.85x107 for Vgs= 5 V Moreover, the proposed TFT exhibits excellent current saturation characteristics at high bias (Vgs= 30 V) and has more than 2.96 times reduction in minimum off-state current compared to conventional TFT’s. Index Terms—stagger source/drain, On/Off current ratio, poly-Si TFT.