The study of improving drift characteristics with co-fabricating ReFET and ISFET
碩士 === 國立交通大學 === 電子工程系所 === 93 === The ion-sensitive field effect transistor (ISFET) was first introduced by P.Bergveld in 1970. The metal gate is replaced by a reference electrode and the electrolyte . Once the ions in electrolyte are trapped by the dangling bond at the surface of sensing layer ,...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69189222289073537812 |