Investigation of BTI Recovery Effect and Trap Properties in High-k CMOS from Single Charge Phenomena

Investigation of BTI Recovery Effect and Trap Properties in High-k CMOS from Single Charge Phenomena

碩士 === 國立交通大學 === 電子工程系所 === 93 ===

Bibliographic Details
Main Authors:	Kuo,Jin-Hau, 郭晉豪
Other Authors:	汪大暉
Format:	Others
Language:	en_US
Published:	2005
Online Access:	http://ndltd.ncl.edu.tw/handle/80852389784950783157

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