Investigation of BTI Recovery Effect and Trap Properties in High-k CMOS from Single Charge Phenomena

Investigation of BTI Recovery Effect and Trap Properties in High-k CMOS from Single Charge Phenomena

碩士 === 國立交通大學 === 電子工程系所 === 93 ===

Bibliographic Details
Main Authors: Kuo,Jin-Hau, 郭晉豪
Other Authors: 汪大暉
Format: Others
Language:en_US
Published: 2005
Online Access:http://ndltd.ncl.edu.tw/handle/80852389784950783157
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spelling ndltd-TW-093NCTU54280302016-06-06T04:10:40Z http://ndltd.ncl.edu.tw/handle/80852389784950783157 Investigation of BTI Recovery Effect and Trap Properties in High-k CMOS from Single Charge Phenomena 利用單電荷現象研究高介電係數CMOS之加溫加壓回復效應與缺陷特性 Kuo,Jin-Hau 郭晉豪 碩士 國立交通大學 電子工程系所 93 汪大暉 2005 學位論文 ; thesis 50 en_US
collection NDLTD
language en_US
format Others
sources NDLTD
description 碩士 === 國立交通大學 === 電子工程系所 === 93 ===
author2 汪大暉
author_facet 汪大暉
Kuo,Jin-Hau
郭晉豪
author Kuo,Jin-Hau
郭晉豪
spellingShingle Kuo,Jin-Hau
郭晉豪
Investigation of BTI Recovery Effect and Trap Properties in High-k CMOS from Single Charge Phenomena
author_sort Kuo,Jin-Hau
title Investigation of BTI Recovery Effect and Trap Properties in High-k CMOS from Single Charge Phenomena
title_short Investigation of BTI Recovery Effect and Trap Properties in High-k CMOS from Single Charge Phenomena
title_full Investigation of BTI Recovery Effect and Trap Properties in High-k CMOS from Single Charge Phenomena
title_fullStr Investigation of BTI Recovery Effect and Trap Properties in High-k CMOS from Single Charge Phenomena
title_full_unstemmed Investigation of BTI Recovery Effect and Trap Properties in High-k CMOS from Single Charge Phenomena
title_sort investigation of bti recovery effect and trap properties in high-k cmos from single charge phenomena
publishDate 2005
url http://ndltd.ncl.edu.tw/handle/80852389784950783157
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AT guōjìnháo lìyòngdāndiànhéxiànxiàngyánjiūgāojièdiànxìshùcmoszhījiāwēnjiāyāhuífùxiàoyīngyǔquēxiàntèxìng
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