The Properties of Bistable Resistivity Switching Memory in Zirconium Oxide
碩士 === 國立交通大學 === 電子工程系所 === 93 === As the size of the device scales down, conventional nonvolatile memory has encountered some problems, such as the base mechanism. In recent years, many kinds of novel nonvolatile memories are investigated widely to substitute for the conventional nonvolatile memor...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11677039393635265566 |