Investigation of Reliability Issues in a Nitride-Based Localized Charge Storage Flash Memory Cell
博士 === 國立交通大學 === 電子工程系所 === 93 === Reliability issues in a trapping nitride, localized charge storage flash memory cell are comprehensively investigated in this dissertation. Though the use of a thick bottom oxide and trapping storage concept provides excellent intrinsic charge retention, data loss...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/m48b7b |