2–D Analysis and New Analytical Models for Fully–Depleted SOI Short–Channel MOSFETs
博士 === 國立交通大學 === 電子工程系所 === 93 === ABSTRACT The analytical models for the threshold voltage and drain current of short–channel fully–depleted SOI MOSFETs have been developed in this thesis. Additionally, new analytical models of potential distribution, threshold voltage and subthreshold current of...
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/8kjrm9 |