A study on the characteristics and reliability of dynamic threshold MOSFETs
博士 === 國立交通大學 === 電子工程系所 === 93 === We discuss dynamic threshold MOS (DTMOS) operations for nMOSFETs ofdifferent dielectric types and thicknesses. We found that, under the DT mode of operation, all devices exhibit a threshold voltage close to 0.7 V, independent of the thickness and gate dielectric t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/rf3kv3 |