Interface morphology and electrical properties of bonded P-GaAs wafers

• Main Authors: Yi-Fan Chen, 陳一凡
• Other Authors: Yew Chung Sermon Wu Ph. D.
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/66308697258721954769

碩士 === 國立交通大學 === 材料科學與工程系所 === 93 === Recently, researches in n-GaAs wafer bonding have revealed significant findings and results. However, there are little researches about p-GaAs wafer bonding; therefore, this study is mainly about factors affect p-GaAs wafer bonding by observation on the morphology of bonding interface through the use of Transmission Electron Microscopy (TEM). The purpose of this study is to discuss: (1) the effect of morphology of bonding interface of p-GaAs wafer bonding on electrical properties ; (2) the relation between different annealing time and the morphology of bonding interface; (3) the effect of native oxide on electrical properties. Comparisons of the morphology of bonding interface under different conditions are also presented.