Study of Electromigration in Thin Tin Film Using Edge Displacement Method
碩士 === 國立交通大學 === 材料科學與工程系所 === 93 === Threshold current density and other electromigration parameters of pure Tin (Sn) films were measured using edge displacement method. Sn film with a thickness of 5000 Å was evaporated on a 1200Å-thick Ti film on a Si substrate. Electromigration behavior was inve...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14038931284162439060 |