| Summary: | 碩士 === 國立交通大學 === 材料科學與工程系所 === 93 === Threshold current density and other electromigration parameters of pure Tin (Sn) films were measured using edge displacement method. Sn film with a thickness of 5000 Å was evaporated on a 1200Å-thick Ti film on a Si substrate. Electromigration behavior was investigated under the current densities of 2.5 × 104 to 1.5 × 105 A/cm2 at room temperature (R.T. = 27 ℃~32 ℃), 50 ℃, 75 ℃ and 100 ℃. Both needle-type and hillock-type whiskers grew in the anode end when the films were stressed at R.T. and 50 ℃, but only hillock-type whiskers were observed when they were stressed at 75 ℃ and 100 ℃. The electromigration rate increased linearly with the applied current density for the four stressing temperatures. The threshold current density (Jc) was measured to be 1.93 × 104, 9.65 × 103, 9.57 × 103 and 7.93 × 103 A/cm2 for R.T., 50 ℃, 75 ℃ and 100 ℃, respectively. The measured activation energy was 0.32 eV. In addition, the measured critical length of the Sn film was 18 μm at R.T. and the products of DZ* were 1.95 �e 10-10, 4.84 �e 10-10, 1.27 �e 10-9 and 1.99 �e 10-9 cm2/s for R.T., 50 ℃, 75 ℃ and 100 ℃, respectively.
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