The ultrafast time-resolved measurements of InGaAs1-xNx single quantum wells
碩士 === 國立交通大學 === 光電工程系所 === 93 === The comparative analysis of the ultrafast carrier dynamics of metal-organic chemical vapor deposition (MOCVD) grown In0.4Ga0.6As and In0.4Ga0.6As0.995N0.005 single quantum wells (SQW) is reported. From photoluminescence (PL) measurement we conclude that the incor...
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| Format: | Others |
| Language: | zh-TW |
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2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60375396345735407183 |