The Design and Implementation of RF Active Device、Passive Device and Front-end Amplifier

• Main Authors: Jia-Lun Chen, 陳嘉倫
• Other Authors: Yo-Sheng Lin
• Format: Others
• Language: en_US
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/31062899960235292222

碩士 === 國立暨南國際大學 === 電機工程學系 === 93 === In this thesis, study of RF active device and RF passive device, respectively. And three kinds of RF Front-end amplifier essential to the wireless transceiver are expounded; they are low noise amplifier, ultra wideband low noise amplifier and wideband amplifier, respectively. The RF device part is study of source-to-body spacing on 4-terminal RF MOS; other is RF passive device is study of variable inductance inductor with MOS switches. The RF amplifier (1/3) is on the design of low noise amplifiers. We use a M-field Coupling-Enhanced small area planar spiral inductor to save layout area, improve circuit performance and implementation of concurrent dual-band low noise amplifier. The RF amplifier (2/3) is on the design of an ultra wideband low noise amplifier. We use an inductive peaking method to improve flat gain for 3.1~10.6 GHz Ultra wideband LNA. The RF amplifier (3/3) is on the design of a wideband amplifier. We use an inductive peaking with MOS switch to study inductive peaking effect on variable bandwidth wideband amplifier.