The Design and Implementation of RF Active Device、Passive Device and Front-end Amplifier
碩士 === 國立暨南國際大學 === 電機工程學系 === 93 === In this thesis, study of RF active device and RF passive device, respectively. And three kinds of RF Front-end amplifier essential to the wireless transceiver are expounded; they are low noise amplifier, ultra wideband low noise amplifier and wideband amplifier,...
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/31062899960235292222 |
| Summary: | 碩士 === 國立暨南國際大學 === 電機工程學系 === 93 === In this thesis, study of RF active device and RF passive device, respectively. And three kinds of RF Front-end amplifier essential to the wireless transceiver are expounded; they are low noise amplifier, ultra wideband low noise amplifier and wideband amplifier, respectively.
The RF device part is study of source-to-body spacing on 4-terminal RF MOS; other is RF passive device is study of variable inductance inductor with MOS switches.
The RF amplifier (1/3) is on the design of low noise amplifiers. We use a M-field Coupling-Enhanced small area planar spiral inductor to save layout area, improve circuit performance and implementation of concurrent dual-band low noise amplifier.
The RF amplifier (2/3) is on the design of an ultra wideband low noise amplifier. We use an inductive peaking method to improve flat gain for 3.1~10.6 GHz Ultra wideband LNA.
The RF amplifier (3/3) is on the design of a wideband amplifier. We use an inductive peaking with MOS switch to study inductive peaking effect on variable bandwidth wideband amplifier.
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