| Summary: | 碩士 === 國立成功大學 === 微機電系統工程研究所 === 93 === Since the integrated circuit（IC）industries and field effect transistor（FET） have invented, how to reduce the size of the devices is the trend and the key point of technology development. The size reduction of the device can not only speed up the operating rate but also promote the density of the device. In the past, by the advancement of manufacturing technique, the densities of the devices are improved as a result of minimizing the volume of the devices. But in the future, we will certainly meet the new bottleneck appears consequentially in the process. To turn aside the technique of process, we have already faced the problem of looking for new material and structure at present. When the size of the devices approaches to the wavelength of electrons, the properties observed in the small size devices are unable to be explained by classical theories. While the quantum effects are significant gradually, the chief work is to create a new device by taking advantage of quantum properties.
Metallic oxides appear the semiconductor properties due to the vacancies of the metallic cation and the oxygenic anion. In this study, we took the common process in the semiconductor fabrication such as photolithography, dry etching, evaporation and e-beam lithography and so on. We attempt to make a single electron transistor（SET）utilizing the nanostructures of metallic oxides on the silicon wafer. Besides, the electric properties are characterized by conductive atomic force microscopy（C-AFM）.
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