Parametric Investigation of Laser-Assisted Direct Imprinting (LADI) Technology for Periodic Structures
碩士 === 國立成功大學 === 微機電系統工程研究所 === 93 === As the rapid development of semiconductor technology, the feature size which is smaller than 100nm has reached its limitation. At the present exposure wavelength, ArF （193nm in wavelength）, optical photolithography technique with several resolution- enhancemen...
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98108745006212572528 |
| Summary: | 碩士 === 國立成功大學 === 微機電系統工程研究所 === 93 === As the rapid development of semiconductor technology, the feature size which is smaller than 100nm has reached its limitation. At the present exposure wavelength, ArF （193nm in wavelength）, optical photolithography technique with several resolution- enhancement techniques has already reached its physical limitation and the escalating cost has become a burden for many companies. Nano-imprinting Lithography (NIL) has been considered as the most promising technique for nano-scaled fabrication and patterning. Recently, a new approach known as Laser-Assisted Direct Imprinting (LADI) has been proposed and demonstrated as an even more efficient way for direct nanofabrication and nanopatterning. In this study, we focused on silicon materials and utilized a single KrF excimer laser pulse (248 nm wavelength and 30 ns pulse duration) as the heating source. Molds of micro-scaled size have been prepared using conventional photolithography techniques. A working platform based on an Excimer Laser Micro-Machining system is constructed for LADI process. The influence of laser fluence and the imprinted pressure on the resulting structures was verifying by varying the laser fluence (0.7∼1.2 J/cm2) and the imprinted load (2∼9 kg). The results have shown that the morphology and the imprinted depth were directly related to the laser fluence and the imprinted pressure.
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