The fabrication and characterization of MOSFET device based on the conjugated polymer
碩士 === 國立成功大學 === 光電科學與工程研究所 === 93 === Abstract Organic thin film transistors fabricated by polymer PDMA , PDDA, polymer electrolyte PEO-LiClO4 or PDDA and polymer solution PEDOT：PSS mixed with PEI are reported. In this thesis, the top contact structure is used for device fabrication. The devices...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/56962123162243988508 |
| Summary: | 碩士 === 國立成功大學 === 光電科學與工程研究所 === 93 === Abstract
Organic thin film transistors fabricated by polymer PDMA , PDDA, polymer electrolyte PEO-LiClO4 or PDDA and polymer solution PEDOT：PSS mixed with PEI are reported.
In this thesis, the top contact structure is used for device fabrication. The devices containing polymer electrolyte PDDA and polymer PDPA as the channel layer show the better device performance. The drain current can reach at high as 135 μA at atmosphere environments. However, devices can’t show the “pinch-off” behavior for VDS larger than 40V due to the defects induced leakage current.
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