The characteristics of porous anodic oxide structure formed on aluminum thin film

• Main Authors: Zeng-Rong Chang, 昌增榮
• Other Authors: Hwa-Teng Lee
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/50969094239800859579

碩士 === 國立成功大學 === 機械工程學系碩博士班 === 93 === The research mainly explores the porous oxide from anodic aluminum thin film: to analyze the surface morphology and section structure of the porous oxidized membrane through SEM, and to match up the voltage- current-time relationship during anodizing process to discuss the formation of the pores and the influence of voltage and electrolyte temperature on the porous structure. Eventually, we compare the anodic interpore distance with the size of poly-Si from Excimer Laser re-crystallization to find out the most suitable parameter. It is for applying the porous oxidized aluminum thin film to the new type poly-Si solar cell. The depth of the alumina barrier is about 50nm when using 60V and 80V of anodizing voltage. When the voltage is above 80V, the increase of voltage will result in the thicker barrier. The barrier thickness adds up to 200nm while voltage rises to 140V. The wall thickness of the pore structure is about 60~70nm under 100V, and it will increase linearly to 206nm while the voltage rises to 140V. The distances between pores are 134nm and 329nm respectively when voltages are 60V and 140V. The average distance will become farther with the mounting voltage. After 120V-40V reducing voltage process, the depth of barrier is 73nm, the wall thickness is about 145nm, the interpore distance is about 255nm. The interpore distance after anodizing with 120V and the size of crystals under laser parameter of 450 mJ/cm2 are similar. Comparing the interpore distance after 120V-40V reducing voltage process and 120V long-term anodizing, we can discover that they are alike. So we can utilize the former process to adjust the pore structure for the application of solar cell.