Effect of Internal Optical Loss on Threshold Characteristics of Semiconductor Quantum Dot Laser
碩士 === 國立成功大學 === 機械工程學系碩博士班 === 93 === The technology of quantum dot laser has attracted great attention recently due to the low threshold current density, higher characteristic temperature, and wider modulation band-width. Its applications include the read write head of the CD-ROM drive, infrare...
Main Authors: | Po-Hung Lin, 林柏宏 |
---|---|
Other Authors: | Tei-Chen Chen |
Format: | Others |
Language: | zh-TW |
Published: |
2005
|
Online Access: | http://ndltd.ncl.edu.tw/handle/16327456701063159649 |
Similar Items
-
Study on Threshold Current Density of Semiconductor Quantum Dot Laser
by: I-Tso Lin, et al.
Published: (2004) -
Chirp and Linewidth Characteristics in Semiconductor Quantum Dot Lasers
by: Tan, Hua
Published: (2009) -
Study of optical characteristics of excitonin quantum dots and quantum-dot molecules
by: Hung Yi Hsiao, et al.
Published: (2007) -
Analysis of Waveguide Bending Loss and Quantum-dot Semiconductor Optical Amplifiers
by: Tzung-Cheng Weng, et al.
Published: (2008) -
Theoretical study of performance characteristics of semiconductor quantum dot lasers
by: Jiang, Li
Published: (2014)