Investigation of InAlAs/InxGa1-xAs Metamorphic High Electron Mobility Transistors (MHEMT’s) With Pseudomorphic and Symmetrically-graded Channels
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 93 === In this thesis, the characteristics of the In0.425Al0.575As/InxGa1-xAs metamorphic high electron mobility transistors (MHEMT’s) with two different channel designs, grown by a molecular beam epitaxy (MBE) system have been studied. The studied devices exhibit...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88877658973428286549 |