| Summary: | 碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 93 === In this thesis, characteristics of TiW and W, which prepared by RF magnetron sputtering system, has been studied. TiW and W have the best film quality at the RF power of 300W and 250W, respectively. At wavelength of 360 nm, transmittance and conductivity of 10 nm TiW and W was 75% / 1.7×10-3 ohm-cm and 68.3% / 1.5×10-3 ohm-cm, respectively.
GaN/InGaN MQW light emitting diodes (LEDs) with TiW and W as p contact layer were fabricated. At 20 mA current injection, forward voltage of LEDs with TiW and W as p-contact layer was 3.66V and 3.77V, respectively. Measured 20 mA output power of LEDs with TiW and W as p-contact layer was 3.44 mW and 3.24 mW, respectively. During reliability test, EL intensity were both decayed around 75%. However, forward voltages were increased by 20% and 30% for LEDs with TiW and W as p-contact layer were, respectively.
Schottky applications of TiW and W contact on GaN based semiconductor were also studied. We fabricated GaN Schottky Diodes with TiW and W as schottky contacts. Calculated Schottky barrier height of TiW and W between u-GaN was 0.773eV and 0.777eV, respectively. Finally, GaN based metal-semiconductor-metal photodetectors (MSM PDs) with TiW and W as transparent electrodes were fabricated. Rejection ratio of PDs with these two contacts were both higher than 103. For a given bandwidth of 1kHz and detector area of 400×400�慆2, minimum noise equivalent power and maximum normalized detectivity were calculated to be 1.987×10-10 W/ 6.365×109 cmHz0.5W-1 and 3.313×10-10 W / 3.818×109 cmHz0.5W-1 with 3V applied bias voltage for PDs with TiW and W transparent electrodes, respectively.
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