Study of Ohmic Contact of P-type GaN and Fabrication of GaN Photodetectors
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 93 === In this thesis, First we must discuss are research the ohmic contact of P-type GaN. Because the GaN is one kind of larger bandgap semiconductor material, Also still was unable in the p-type impurity doping aspect effectively to break through the bottlenec...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60908341797814300533 |