Effect of Pretexturing on the Anodization Behavior of Al

• Main Authors: Chuan-Chi Chen, 陳傳祺
• Other Authors: Min-Hsiung Hon
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/32523019294902862066

碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 93 === Porous anodic alumina oxide (AAO), a typical self-ordered nanochannel material with the characteristic feature of ordered high-aspect-ratio channels, has recently attracted increasing interest as a key material for the fabrication of nanometer-scale structures and devices. However, the defect-free area of naturally ordering nanochannel is limited to a domain of several micrometers. Therefore, the preparation of AAO with a single domain structure in a large area is of great interest to the materials community. The proporsed pretexturing procedure by nanoimprinting is effective for precise control of the growth of the channel array in the anodic alumina oxide. But this procedure is relatively expensive due to the utilization of electron beam lithography. In this study, the imprinting procedure has been conducted on aluminum substrates by utilizing ordered AAO and patterned Si as the mold, which can be easily fabricated in a large area at low cost. After imprinting, the anodization of patterned aluminum substrates was performed with different process parameters in order to study the effect of the pre-patterning step on the pore growth characteristics of AAO. Experimental results show that the concaves on the pre-patterned surface of aluminum can guide the growth of nanochannels during anodization. Even a new lattice of pores with a reduced dimension can be prepared with the matched voltages by the assistance of the self-repair of AAO. In addition, the ordered nanopore arrays can be successfully prepared using the same procedure on the Al films deposited on the Si substrate. Thus, it is expected to be applied in the fabrication of nanostructures and nanodevices in the future.