Device Models of Body Current for SOI FETs

• Main Authors: P.C.Tsai, 蔡佩勤
• Other Authors: H.C.Line
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/68701888185262272786

碩士 === 國立中興大學 === 電機工程學系 === 93 === Abstract The SOI MOSFET technology can improve many existing problems in the conventional CMOS processes. However,since the body is floated,it may result in instability of electrical charateicetics. Therefore,some sensitive circuits require body contacts to improve the performance. Currently,many researchers have proposed various structures of SOI MOSFETs. The goal of this thesis is to derive and verify the proposed body current models of H gate structures of SOI MOSFETs. Various gate structures of Silicon on Insulator(SOI) FETs fabricated by National Nano Device Laboratories(NDL) were investigated. The body current (Ibody) of the SOI NMOSFETs shows extra components as compared to that of the bulk MOSFETs. The body currents in conventional MOSFETs are mostly due to impact ionization. According to measurement and simulations,the extra components in SOI are attributed to reverse biased tunneling effects induced by inversion layers. In addition to analyze the electrical charateristics,the approximated body current model was developed for the future analysis of similar device structures.