| Summary: | 碩士 === 國立高雄應用科技大學 === 電子與資訊工程研究所碩士班 === 93 === The ZnO phosphor thin films were deposited on SiO2/Si substrates by spin coating with sol-gel processing in this thesis. By changing the heating temperature (600℃~900℃) and the annealing atmospheres, the effects of various processing parameters on the thin film growth and photoluminescence intensity of the thin films were investigated.
The physical characteristics of ZnO thin films deposited with different processing parameters were obtained by the analyses of XRD,SEM and XPS. The optical properties of ZnO thin films were discussed by photoluminescence measurement.
According to the experimental results, it was found that the FWHM in X-ray diffraction is smaller (i.e. the grain size is larger) and the relative area of O-Zn in electron spectroscopy for chemical analysis is larger as the annealing temperatures were increased, and resulted in the increasing UV light intensity. In addition, the photoluminescence intensity changed by different annealing atmospheres and the different thickness were also investigated.
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