Growth and characterization of AlGaN films and AlGaN/GaN heterostructures on (11-20) Al2O3 substrates
碩士 === 逢甲大學 === 材料科學所 === 93 === The purpose of this study is to explore the characteristics of AlGaN films and AlGaN/GaN heterostructures grown on (11-20) Al2O3 substrates using atomic layer epitaxy. Trimethylaluminum (TMA), trimethylgallium (TMG) and ammonia (NH3)were used as the sources of Al, Ga...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05465103103106849884 |