High Density Plasma CVD Technology Development And Challenges

• Main Authors: Mican Lain, 賴建修
• Other Authors: Chung Yi-Nung
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/53276039246117852987

碩士 === 大葉大學 === 電機工程學系碩士在職專班 === 93 === Plasma-assisted deposition of thin films is widely used in microelectronic circuit manufacturing，Materials deposited dielectrics such as silicon oxide、silicon nitride、and doped silicon glass。 This paper reviews chemical vapor deposition (CVD) applications and techniques for dielectric thin films。 With each device generation，shrinking dimensions and gap-spaces make it more difficult for existing conventional processes to fill the spaces between devices or metal lines without voids。High Plasma Density Chemical Vapor Deposition (HDPCVD) process can deposits high quality silicon dioxide films for sub-half micron， high aspect ratio applications，including inter-metal dielectric (IMD)， pre-metal dielectric (PMD) and shallow trench isolation (STI) applications。For reduce RC delay to improve devices operate speed，HDPCVD deposited fluorine -doped silicon oxide (FSG) film(k=3.5) also be a good alternate，The target generation for this technology is for 0.35 um devices，with extendibility down to 0.10 um devices and beyond。In this paper， I would like to introduce HDPCVD process background and concept，In particular，I would focus on HDPCVD deposited dielectric film application and Process parameters fine tuning 。In the final，HDPCVD reduces process issues and further challenges also would be discussed。