Study of ITO/p-SiGe Contact System
碩士 === 大葉大學 === 電機工程學系碩士班 === 93 === Indium-Tin-Oxide (ITO) has been deposited onto undoped Si0.8Ge0.2 layer by using radio frequency (RF) sputtering system, where the Si0.8Ge0.2 layer was grown onto n-Si substrate by using ultra-high vacuum chemical vapor deposition (UHV CVD). The undoped Si0.8Ge0....
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/80473236029070106048 |