Growth and field emission properties of C59N doped C60 polycrystalline films
碩士 === 中原大學 === 應用物理研究所 === 93 === By using a dc-arc furnace with a flow of mixture of nitrogen and helium gases, heterofullerenes C59N can be synthesized. The powder made by extraction and column liquid chromatography. Field emission properties of polycrystalline films obtained by physical vapor de...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/32ynyx |
| Summary: | 碩士 === 中原大學 === 應用物理研究所 === 93 === By using a dc-arc furnace with a flow of mixture of nitrogen and helium gases, heterofullerenes C59N can be synthesized. The powder made by extraction and column liquid chromatography. Field emission properties of polycrystalline films obtained by physical vapor deposition . The features of C60 polycrystalline films exhibit a strong effect on field enhancement (β: 600~9900 ) which results in a low threshold field ( ETH : 0.63~3.08 V/μm ) defined at the beginning of emission, and heterofullerenes C59N as an emitter material has been demonstrated.
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