| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 93 === In this thesis, the main topic would be discussed that analyzed the characteristic of the high power quantum wells laser diode with broad-waveguide structure. It included different characteristic of the device and the analysis of the theorem for laser diodes.
In the side of the experiment, the first, the basic characteristics were measured and analyzed for laser. In addition, the different strip width and cavity length laser were discussed. Then, the behavior of the characteristic was probed into that temperature of environment affected laser diodes. Go on, the Al2o3 thin-film was evaporated on the laser mirror facet by E-gun. Reflectance and threshold current were affected by Al2o3 thickness for laser diodes facet. In the last part of this study, we analyzed the polarization property of laser diodes. Finally, the advantage and the fault were considered that related with all of characteristics for the high power quantum wells laser diode with broad-waveguide structure.
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