The Study of Novel Anti-Fuse Memory Device

• Main Authors: Zih-Wun Wang, 王姿文
• Other Authors: Erik S.Jeng
• Format: Others
• Language: en_US
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/56375465681547044275

碩士 === 中原大學 === 電子工程研究所 === 93 === Fuse and antifuse devices are important micro-electric devices. Their applications include as memory redundancy, RF circuit trimming, security code, and low-bit-count electric label. Their device structures of fuse devices are mainly metal fuse-type and poly fuse-type. They can be programmed by applying large current to melt the conductor line, and the power consumption of these programming devices is large. The structure of antifuse devices is two conductor plate sandwiched with thin dielectric material. The high voltage is supplied between two plates at programming. These devices require additional process steps. The commercial antifuse products become feasible since the gate oxide breakdown voltage is decreasing with the device shrinking. The standard MOSFET is used here for study of antifuse devices. The gate oxide breakdown mechanics and avalanche breakdown mechanics can be used for programming In this thesis, punch-through mechanics are used for programming wherein the high field causes permanently channel breakdown between source and drain terminal. The programming time and programming voltage are decreased based on this programming method. TCAD tools, TSUPREM4 and MEDICI, are used to simulate the antifuse structure, basic electrical characteristics and program behavior.