The Electrical Reliability Study of Strained-Si MOSFET
碩士 === 正修科技大學 === 電子工程研究所 === 93 === Strained Si/relaxed Si1-xGex structures are promising candidates for enhancement of CMOS performance. In a surface-channel strained Si/relaxed Si1-xGex nMOSFET, biaxial tensile strain is induced in Si cap layer grown on a relaxed Si1-xGex substrate. In this thesi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/23261132348787256891 |