DRAM Repair algorithm methodology extension

• Main Authors: Chang-Ming Liu, 劉昌明
• Other Authors: Hsing-Chung Liang
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/52311061777630793718

碩士 === 長庚大學 === 電子工程研究所 === 93 === In the memory production process, the appropriate principle of repair must be considered for restoring the faulty units back to normal in order to improve the qualification percentage wafer. Therefore, in this research, we intend to expand the local repairing technique of the original system by adding global repairing, i.e. considering the spare rows of both local areas to increase the possibility of repairing. The content of research includes not only adding the spare rows of both areas new parameters, but also setting 4 inspection items in the global repair: failed spare rows and columns, backup complementary uses, row repair inspection and cross-area repair inspection of rows. After experiments with three wafers, it is found that, with very limited additional time, the qualification percentage can be improved by 2.64~4.45%, indicating a remarkable achievement in improving production capacity and reducing costs.