Improvement of HfO2 by Reactive Sputter of Optimized Oxygen Content and Post Deposition Annealing
碩士 === 長庚大學 === 電子工程研究所 === 93 === Abstract According to the technology roadmap, the standard CMOS gate oxide material which has served the industry so long with high performance and good reliability will be changed when the process technology continue to scale down. Copper will replace Al-alloy, lo...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46347608636961442003 |