| Summary: | 碩士 === 長庚大學 === 電子工程研究所 === 93 === Abstract
According to the technology roadmap, the standard CMOS gate oxide material which has served the industry so long with high performance and good reliability will be changed when the process technology continue to scale down. Copper will replace Al-alloy, low-k dielectric will replace SiO2-base IMDS and high-k gate dielectric will replace SiO2 gate-oxide. However, many high-k gate dielectric (e.g. TiO2, Ta2O5, BST…) are thermally unstable when it is directly contacted with Si and need an additional barrier layer to prevent from reaction.
From above discussion, we take HfO2 films as the promising gate dielectric due to its high dielectric constant of up to 40, energy gap of 5.65eV, and thermodynamically stable when it is contacted with Si. In this thesis, we discussed the electrical characteristics including C-V, I-V and SILC of MOS capacitors.
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