Theoretical and Experimental Study on the Material Removal Rate and Polishing Temperature Rise of Precision Polishing Processes

• Main Authors: Pay-Yau Huang, 黃培堯
• Other Authors: Yeau-Ren Jeng
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/98277306740768622509

博士 === 國立中正大學 === 機械系 === 93 === Due to the demand for high precision and high performance, the requirements for surfaces of mechanical and electronical components are becoming stricter. Precision polishing is a finishing process that makes the roughness and planarity of a surface reach a certain admissible range. This method is widely used for surfaces of metal, ceramic, glass or wafer. The operation parameters and consumables’ characteristics can significantly affect the polishing results. Therefore, the understanding of the relationship between the operation parameters and polishing results is the key to improve the precision polishing processes. Chemical Mechanical Polishing is a highly effective technique for planarizing wafer surfaces. Consequently, considerable research has been conducted into its associated material removal mechanisms and polishing temperature rise. The present study proposes an improved micro-contact model that considers the effects of abrasive particles between the polishing interfaces. Comparisons with experimental data and underlying physics provided by this approach demonstrate that our approach can investigate the effects of consumables in addition to the operation parameters of CMP and look into the physical insight of the interfacial phenomena not elucidated by previous approaches. The extensions of this approach to endpoint detection technology and Post-CMP cleaning process are also discussed. Furthermore, the developed model have also been modified to investigate the metal polishing process to study the relationship amount the operation parameters, material removal rate and polishing temperature.