Study of the novel method to improve electrical characteristic of p-type GaN by applying Ni catalysts
碩士 === 國立雲林科技大學 === 電子與資訊工程研究所碩士班 === 92 === In this dissertation, we will discuss different conditions of Ni film thickness and annealing temperatures for p-type GaN to find out the best way to increase the hole concentration and improve electrical characteristic. We chose Ni because it has been wi...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/90141752347948559081 |