Surfactant Removal of Copper Ion and Abrasive Colloidal Contamination in the Post-CMP

• Main Authors: Hsiang-An Kung, 孔祥安
• Other Authors: Jyh-Herng Chen
• Format: Others
• Language: zh-TW
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/00981667077625437663

碩士 === 國立臺北科技大學 === 材料及資源工程系碩士班 === 92 === The size of Ultra- Large- Scale- Integration (ULSI) components is getting smaller. Traditionally, aluminum interconnects are used as connecting materials. However, as a result of high electrical resistivity of aluminum, the amount of the interconnects layers are substantially increased up to 7 and even more, which leads to ineffective production and fails to meet the economical needs. Due to the low electrical resistivity and high electromigration resistance, copper interconnects are widely used in recent interconnect applications, among which the dual damascene process and the chemical mechanical polishing are essential and significant. Nevertheless, copper CMP process leaves a large amount of contamination, which must be cleaned and eliminated, such as the metal ion and the abrasive from the polishing slurry. In this study, the solution of surfactants Triton X-100 and metal extractants D2EHPA is used to clean the wafer surface after the CMP process. Triton X-100 is able to change the hydrophobic passivation of copper surface, which meets the purpose of removing the abrasive from the surface. In the extract experiment on removing copper, it is shown that D2EHPA is possessed with fine chelate ability among copper. The effects on the extracting ability of mixed solution are inapparent. Furthermore, the mixing process simplifies two cleaning steps into one, which effectively raises the cleaning efficiency and shortens the manufacturing time.