High reliability GaN-based light-emitting diodes with photo-enhanced wet etching

• Main Authors: Ving-Lin Huang, 黃英霖
• Other Authors: Lung-Chien Chen
• Format: Others
• Language: zh-TW
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/06523318769287782839

碩士 === 國立臺北科技大學 === 光電技術研究所 === 92 === This study concerns the generation of GaN-based light-emitting diodes (LEDs), whose n-GaN surfaces were processed using photo-enhanced chemical etching (PEC) by illumination using an unfiltered Hg arc lamp. Reducing the damage induced by plasma dry etching process is one means of improving the performance of the device. Etching rates of 29.8Å/min were obtained using KOH solution at a concentration of 45% and an illumination intensity of 50mW/cm2. The GaN light-emitting diodes with PEC process using KOH solution for 10min, exhibit reverse currents of 4.83×10-10 and 4.06×10-8A at reverse biases of 5 and 10V, respectively. The GaN-based LEDs have an ideality factor n of 1.17 at a forward bias of 1.1V. The degradation rate of the output power of light did not exceed 0.3% after burning-in for 500 hr in a reliability test at 50 mA and room temperature.